IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRFP23N50LPBF
Manufacturer Part Number
IRFP23N50LPBF
Description
MOSFET N-CH 500V 23A TO-247AC
Specifications of IRFP23N50LPBF
Transistor Polarity
N-Channel
Continuous Drain Current Id
23A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
235mohm
Rds(on) Test Voltage Vgs
10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
235 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
370W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.235 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
370000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Voltage Vgs Max
30V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP23N50LPBF
Available stocks
Part Number:
IRFP23N50LPBF
Part Number:
IRFP23N50LPBF
Part Number:
IRFP23N50LPBF
Part Number:
IRFP23N50LPBF
Part Number:
IRFP23N50LPBF
I
I
I
P
V
dv/dt
T
T
I
I
V
t
Q
I
t
Absolute Maximum Ratings
Diode Characteristics
D
D
DM
S
SM
rr
RRM
on
www.irf.com
Applications
•
•
•
•
D
GS
J
STG
SD
Features and Benefits
•
•
•
•
rr
@ T
@ T
@T
Symbol
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
.
Parameter
Ã
Parameter
e
GS
GS
SMPS MOSFET
@ 10V
@ 10V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
560
980 1500
7.6
300 (1.6mm from case )
250
330
840
V
500V
1.5
23
92
11
10lb
-55 to + 150
DSS
x
Max.
in (1.1N
370
± 30
2.9
nC T
23
15
92
21
ns
A
V
A
R
HEXFET Power MOSFET
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
IRFP23N50L
DS(on)
0.190Ω
J
J
J
J
J
J
x
= 125°C, di/dt = 100A/µs
= 125°C, di/dt = 100A/µs
m)
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C
Conditions
typ.
S
F
S
= 14A, V
= 23A
= 23A, V
Trr
170ns
TO-247AC
GS
GS
PD - 94230C
typ.
= 0V
= 0V
f
f
Units
W/°C
V/ns
°C
W
A
V
f
f
23A
I
D
1
07/20/04
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IRFP23N50LPBF Summary of contents
Applications • • • • Features and Benefits • • • • . Absolute Maximum Ratings Parameter 25°C Continuous Drain Current 100°C Continuous Drain Current ...
Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
VGS TOP 15V 10V 8.0V 10 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 0.1 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10.00 V ...
0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss 10 ...
OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10us 100us 10 1ms ° 10ms ° 150 C J Single Pulse 1 10 100 1000 V , Drain-to-Source Voltage (V) DS Fig ...
D = 0.50 0.1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 Fig 13. Threshold ...
D.U 20V 0.01 Ω Fig 15a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I I ...
Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 17. For N-Channel HEXFET 8 + • • • - • ...
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