IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
d. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
DS
oss
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy time as C
J
= 25 °C, unless otherwise noted)
a
C
SYMBOL
This datasheet is subject to change without notice.
oss
SYMBOL
V
C
R
V
oss
C
C
t
t
I
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
eff. (ER)
R
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
I
t
t
on
thCS
thJC
DS
oss
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
G
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
T
T
T
V
V
V
J
J
J
J
GS
GS
GS
V
= 125 °C
=1 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C
= 25 °C
DS
T
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
J
= 400 V, V
= 25 °C, I
V
V
TYP.
V
V
TEST CONDITIONS
V
f = 1.0 MHz, see fig. 5
f = 1 MHz, open drain
0.24
oss
DS
DS
R
GS
DD
DS
-
-
g
= 500 V, V
= V
= 6.0, V
while V
= 0 V, I
= 50 V, I
= 250 V, I
oss
V
T
V
see fig. 10
GS
V
J
DS
V
V
S
GS
GS
GS
while V
DS
DS
I
= 25 °C
D
V
V
= 14 A, V
= ± 30 V
, I
= 25 V,
DS
DS
= 0 V,
= 23 A, V
see fig. 6 and 13
dI/dt = 100 A/μs
= 0 V, T
= 400 V , f = 1.0 MHz
= 1.0 V , f = 1.0 MHz
D
DS
D
GS
D
= 250 μA
= 0 V to 400 V
= 0 V to 400 V
= 250 μA
D
I
is rising fom 0 % to 80 % V
GS
= 14 A
I
= 10 V
D
F
DS
= 23 A
b
D
= 14 A
= 23 A,
= 0 V
= 1 mA
is rising fom 0 % to 80 % V
GS
J
DS
G
= 125 °C
b
= 0 V
= 400 V
b
d
MAX.
b
0.34
b
D
S
b
d
c
40
-
MIN.
500
3.0
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0445-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
DS
Document Number: 91209
0.190
.
TYP.
3600
4800
0.27
380
100
220
160
170
220
560
980
1.2
7.6
DS
37
26
94
53
45
-
-
-
-
-
-
-
-
-
-
-
-
.
UNIT
°C/W
MAX.
± 100
0.235
1500
150
250
330
840
5.0
2.0
1.5
S
50
44
72
23
92
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
mA
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A