IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 9 - Typical Source-Drain Diode Forward Voltage
100.00
10.00
1.00
0.10
25
20
15
10
0.0
5
0
25
T
J
0.001
0.01
= 150 °C
10
0.1
T
1
0.00001
C
V
50
, Case Temperature
0.5
D = 0.50
SD
, Source-to-Drain Voltage (V)
0.10
0.20
0.02
0.05
0.01
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
T
J
= 25 °C
1.0
100
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
V
1.5
GS
This datasheet is subject to change without notice.
125
= 0 V
(°C)
t
1
, Rectangular Pulse Duration (sec)
2.0
150
0.001
0.01
IRFP23N50L, SiHFP23N50L
90 %
10 %
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
V
V
DS
GS
Notes:
1. Duty factor D =
2. PeakT
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
J = P DM x Z thJC + T C
V
DS
t
r
0.1
P DM
t 1 / t 2
D.U.T.
t 1
www.vishay.com/doc?91000
R
Vishay Siliconix
D
t 2
t
d(off)
t
f
+
-
www.vishay.com
1
V
DD
5