IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet

MOSFET N-CH 500V 22A TO-247AC

IRFP22N50APBF

Manufacturer Part Number
IRFP22N50APBF
Description
MOSFET N-CH 500V 22A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP22N50APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3450pF @ 25V
Power - Max
277W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
277000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
22A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP22N50APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP22N50APBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP22N50APBF
Quantity:
3 075
Company:
Part Number:
IRFP22N50APBF
Quantity:
5 000
Company:
Part Number:
IRFP22N50APBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
 22 A, dI/dt  190 A/µs, V
TO-247AC
()
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, L = 4.87 mH, R
G
D
a
S
c
a
a
DD
b
V
GS
 V
g
= 10 V
DS
= 25 , I
G
, T
N-Channel MOSFET
J
Single
 150 °C.
500
120
32
52
This datasheet is subject to change without notice.
AS
= 22 A (see fig. 12).
D
S
Power MOSFET
C
V
0.23
= 25 °C, unless otherwise noted)
GS
6-32 or M3 screw
at 10 V
T
C
for 10 s
= 25 °C
T
T
C
C
TO-247AC
IRFP22N50APbF
SiHFP22N50A-E3
IRFP22N50A
SiHFP22N50A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
Requirement
Ruggedness
and Current
IRFP22N50A, SiHFP22N50A
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
1180
± 30
300
500
277
2.2
4.8
1.1
22
14
88
22
28
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

Related parts for IRFP22N50APBF

IRFP22N50APBF Summary of contents

Page 1

... Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S • Full Bridge Converters • Power Factor Correction Boost TO-247AC IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP22N50A, SiHFP22N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Output Characteristics Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r ...

Page 6

... IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 12d - Typical Drain-to-Source Voltage vs. Same type as D.U. Fig. 13b - Gate Charge Test Circuit This datasheet is subject to change without notice ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91207. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords