IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 2

• Manufacturer Part Number: IRFP22N50APBF
• Description: MOSFET N-CH 500V 22A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP22N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 277W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 277000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP22N50APBF

Diode Characteristics
Document Number: 91207
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
V
∆V
R
V
AR
DSS
GSS
d(on)
d(off)
S
SM
rr
on
r
f
fs
AS
AR
θJC
θCS
θJA
SD
iss
oss
rss
oss
oss
oss
(BR)DSS
DS(on)
GS(th)
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
500
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
12
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
3450 –––
4935 –––
0.55 –––
–––
–––
–––
–––
513
137
264
–––
–––
–––
570
–––
–––
–––
–––
–––
––– -100
––– 0.23
6.1
26
94
47
47
27
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
850
–––
250
100
1.5
9.2
4.0
32
52
25
22
88
V/°C
nC
ns
µC
pF
ns
µA
nA
S
V
Ω
V
V
Typ.
Typ.
0.24
–––
–––
–––
–––
–––
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
D
D
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
G
D
= 22A
= 22A
= 25°C, I
= 25°C, I
= 11Ω,See Fig. 10
= 4.3Ω
= 50V, I
= 400V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
= 22A, V
Conditions
= 22A
= 13A
= 13A
= 250µA
GS
GS
= 0V to 400V …
Max.
Max.
1180
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
0.45
–––
22
28
40
= 0V
= 0V, T
D
www.vishay.com
GS
= 1mA†
„
„
J
= 0V „
G
= 125°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)
2