IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 4

MOSFET N-CH 500V 22A TO-247AC

IRFP22N50APBF

Manufacturer Part Number
IRFP22N50APBF
Description
MOSFET N-CH 500V 22A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP22N50APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3450pF @ 25V
Power - Max
277W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
277000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
22A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP22N50APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP22N50APBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP22N50APBF
Quantity:
3 075
Company:
Part Number:
IRFP22N50APBF
Quantity:
5 000
Company:
Part Number:
IRFP22N50APBF
Quantity:
70 000
Document Number: 91207
100000
10000
1000
100
100
0.1
10
10
1
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
T = 150 C
Drain-to-Source Voltage
J
V
V
DS
SD
Forward Voltage
V
C
C
C
0.6
°
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
T = 25 C
J
gs
gd
ds
+ C
+ C
C
C
C
1.0
iss
oss
rss
°
gd
gd
f = 1MHz
, C
100
ds
1.4
SHORTED
V
GS
= 0 V
1000
1.8
A
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
22A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
20
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
40
BY R
60
DS(on)
V
V
V
DS
DS
DS
10us
100us
1ms
10ms
FOR TEST CIRCUIT
SEE FIGURE
= 400V
= 250V
= 100V
1000
80
www.vishay.com
100
13
10000
120
4

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