IRFP17N50LPBF Vishay, IRFP17N50LPBF Datasheet

MOSFET N-CH 500V 16A TO-247AC

IRFP17N50LPBF

Manufacturer Part Number
IRFP17N50LPBF
Description
MOSFET N-CH 500V 16A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP17N50LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2760pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.32 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
16A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
320mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP17N50LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP17N50LPBF
Quantity:
1 800
Document Number: 91205
Applications
I
I
I
P
V
dv/dt
T
T
I
I
V
t
Q
I
t
Features and Benefits
Absolute Maximum Ratings
Diode Characteristics
D
D
DM
S
SM
rr
RRM
on
J
STG
D
GS
SD
rr
@ T
@ T
@T
Symbol
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Parameter
Ã
Parameter
e
SMPS MOSFET
GS
GS
@ 10V
@ 10V
Min. Typ. Max. Units
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
470
810 1210
7.3
300 (1.6mm from case )
250
330
710
V
500V
1.5
IRFP17N50LPbF
16
64
11
10lb
-55 to + 150
DSS
x
Max.
in (1.1N
± 30
220
1.8
nC T
16
11
64
13
ns
A
V
A
R
HEXFET Power MOSFET
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
DS(on)
J
J
J
J
J
J
x
= 125°C, di/dt = 100A/µs
= 125°C, di/dt = 100A/µs
0.28Ω
m)
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C
Conditions
typ.
S
F
S
= 16A
= 16A, V
= 16A, V
TO-247AC
Trr
170ns
GS
GS
www.vishay.com
typ.
= 0V
= 0V
PD - 95662
Units
f
f
W/°C
V/ns
°C
W
A
V
f
f
07/30/04
16A
I
D
1

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IRFP17N50LPBF Summary of contents

Page 1

... Pulsed Source Current SM Ã (Body Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on Document Number: 91205 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET V R DSS 500V Max. @ 10V 10V 220 1.8 ± - 150 300 (1 ...

Page 2

... 10V, See Fig. 7 & 250V 16A 7.5Ω 10V, See Fig. 14a & 14b 25V DS ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 400V, ƒ = 1.0MHz 0V 400V GS DS Max. Units 390 Max. Units 0.56 ––– °C DSS . DSS www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 16A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 6. Typ. Output Capacitance 100 10 1 0.1 120 150 0.2 Fig 8. Typical Source-Drain Diode 100 200 300 400 500 V DS, Drain-to-Source Voltage (V) Stored Energy vs 150 C ° ° 0.6 0.9 1.3 V ,Source-to-Drain Voltage (V) SD Forward Voltage www.vishay.com 600 1.6 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91205 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off Notes: 1. Duty factor Peak thJC C 0.1 www.vishay.com 1 5 ...

Page 6

... Fig 13. Maximum Avalanche Energy 15V DRIVER + Fig 14b. Unclamped Inductive Waveforms Fig 15b. Basic Gate Charge Waveform I D TOP 10A BOTTOM 16A 50 75 100 125 ° Starting T , Junction Temperature ( C) J vs. Drain Current V (BR)DSS Charge www.vishay.com 7A 150 6 ...

Page 7

... Voltage Inductor Curent * Fig 16. For N-Channel HEXFET Document Number: 91205 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + - * V =10V www.vishay.com 7 ...

Page 8

... Document Number: 91205 INT ERNATIONAL RECTIF IER IRFPE30 LOGO 035H SEMBLY LOT CODE Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. TAC Fax: (310) 252-7903 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H 07/04 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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