MOSFET N-CH 1000V 6.1A TO-247AC

IRFPG50PBF

Manufacturer Part NumberIRFPG50PBF
DescriptionMOSFET N-CH 1000V 6.1A TO-247AC
ManufacturerVishay
IRFPG50PBF datasheets
 


Specifications of IRFPG50PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs2 Ohm @ 3.6A, 10V
Drain To Source Voltage (vdss)1000V (1kV)Current - Continuous Drain (id) @ 25° C6.1A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs190nC @ 10V
Input Capacitance (ciss) @ Vds2800pF @ 25VPower - Max190W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)2 Ohm @ 10 VDrain-source Breakdown Voltage1000 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current6.1 A
Power Dissipation190000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id6.1A
Drain Source Voltage Vds1kVOn Resistance Rds(on)2ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFPG50PBF
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-247AC
G
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 40 mH, R
DD
J
 6.1 A, dI/dt  120 A/μs, V
 600, T
c. I
SD
DD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91254
S11-0441-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
2.0
• Isolated Central Mounting Hole
190
• Fast Switching
23
• Ease of Paralleling
110
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
TO-247AC
commercial-industrial applications where higher power
S
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
TO-247AC
IRFPG50PbF
SiHFPG50-E3
IRFPG50
SiHFPG50
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
for 10 s
6-32 or M3 screw
= 25 , I
= 6.1 A (see fig. 12).
g
AS
 150 °C.
J
This datasheet is subject to change without notice.
IRFPG50, SiHFPG50
Vishay Siliconix
device
design,
low
on-resistance
package
is
preferred
LIMIT
UNIT
V
1000
DS
V
V
± 20
GS
6.1
I
D
3.9
A
I
24
DM
1.5
W/°C
E
800
mJ
AS
I
6.0
A
AR
E
19
mJ
AR
P
190
W
D
1.0
V/ns
, T
- 55 to + 150
J
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
and
for
1

IRFPG50PBF Summary of contents

  • Page 1

    ... TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFPG50PbF SiHFPG50-E3 IRFPG50 SiHFPG50 = 25 °C, unless otherwise noted) C ...

  • Page 2

    ... IRFPG50, SiHFPG50 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Document Number: 91254 S11-0441-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFPG50, SiHFPG50 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

  • Page 4

    ... IRFPG50, SiHFPG50 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

  • Page 5

    ... Document Number: 91254 S11-0441-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFPG50, SiHFPG50 Vishay Siliconix D.U. Pulse width ≤ ...

  • Page 6

    ... IRFPG50, SiHFPG50 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 7

    ... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91254. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...