IRFPG50PBF Vishay, IRFPG50PBF Datasheet - Page 3

• Manufacturer Part Number: IRFPG50PBF
• Description: MOSFET N-CH 1000V 6.1A TO-247AC
• Manufacturer: Vishay

Specifications of IRFPG50PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 6.1A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPG50PBF

IRFPG50, SiHFPG50
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91254
www.vishay.com
S11-0441-Rev. B, 14-Mar-11
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000