IRFPS37N50APBF Vishay, IRFPS37N50APBF Datasheet

MOSFET N-CH 500V 36A SUPER247

IRFPS37N50APBF

Manufacturer Part Number
IRFPS37N50APBF
Description
MOSFET N-CH 500V 36A SUPER247
Manufacturer
Vishay
Datasheets

Specifications of IRFPS37N50APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5579pF @ 25V
Power - Max
446W
Mounting Type
Through Hole
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
446000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
36A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPS37N50APBF

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Document Number: 91258
Notes  through …
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
1001)
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High Speed Power Switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss Specified (See AN
@T
Full Bridge Converters
Power Factor Correction Boost
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
are on page 8
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 150
R
SUPER-247
Max.
144
446
± 30
DS(on)
3.6
3.5
36
23
0.13Ω
®
Power MOSFET
max
www.vishay.com
Units
W/°C
36A
V/ns
°C
I
W
A
V
D
1

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IRFPS37N50APBF Summary of contents

Page 1

... Notes  through … are on page 8 Document Number: 91258 SMPS MOSFET V DSS 500V @ 10V GS @ 10V GS ® HEXFET Power MOSFET R max I DS(on) 0.13Ω 36A SUPER-247 Max. Units 144 446 W 3.6 W/°C ± 3.5 V/ns - 150 °C 300 (1.6mm from case ) www.vishay.com D 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 22A „ 250µ 0V 150° Conditions = 22A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V … DS Max. Units 1260 Max. Units 0.28 ––– °C/W 40 Conditions „ = 36A 36A www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 36A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 36A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE 40 80 120 160 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 200 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91258 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 580 560 540 520 + 500 0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 16A 23A BOTTOM 36A 50 75 100 125 ° J Vs. Drain Current Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 ...

Page 7

... Voltage Inductor Curent Fig 14. For N-channel HEXFET Document Number: 91258 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + - V =10V www.vishay.com 7 ...

Page 8

... V ≤ (BR)DSS ≤ 150° Document Number: 91258 „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … C eff fixed capacitance that gives the same charging time oss as C while V is rising from 0 to 80% V oss DS , DSS www.vishay.com 8 ...

Page 9

... For recommended footprint and soldering techniques refer to application note #AN-994 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 Document Number: 91258 PART NUMBER IRFPS37N50A 719C 17 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Data and specifications subject to change without notice. TAC Fax: (310) 252-7903 09/04 www.vishay.com 9 ...

Page 10

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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