MOSFET N-CH 500V 14A TO-247AC

IRFP450

Manufacturer Part NumberIRFP450
DescriptionMOSFET N-CH 500V 14A TO-247AC
ManufacturerVishay
IRFP450 datasheets
 


Specifications of IRFP450

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs400 mOhm @ 8.4A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs150nC @ 10VInput Capacitance (ciss) @ Vds2600pF @ 25V
Power - Max190WMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACTransistor PolarityN Channel
Rds(on) Test Voltage Vgs10VPeak Reflow Compatible (260 C)No
Drain Source On Resistance @ 10v400mohmThermal Resistance0.65°C/W
Current Rating14AGate-to-drain Charge53.3nC
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names*IRFP450
IRFP450IR
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-247
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 7.0 mH, R
DD
J
≤ 14 A, dI/dt ≤ 130 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91233
S-81271-Rev. A, 16-Jun-08
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
500
• Repetitive Avalanche Rated
0.40
• Isolated Central Mounting Hole
150
• Fast Switching
20
• Ease of Paralleling
80
• Simple Drive Requirements
Single
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
S
earlier TO-218 package because its isolated mounting hole.
N-Channel MOSFET
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
TO-247
IRFP450PbF
SiHFP450-E3
IRFP450
SiHFP450
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 14 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
IRFP450, SiHFP450
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
500
DS
V
± 20
GS
14
I
D
8.7
I
56
DM
1.5
E
760
AS
I
8.7
AR
E
19
AR
P
190
D
dV/dt
3.5
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1