IRFP450 Vishay, IRFP450 Datasheet

IRFP450

Manufacturer Part Number

IRFP450

Description

MOSFET N-CH 500V 14A TO-247AC

Manufacturer

Vishay

Datasheets

1.IRFP450.pdf (8 pages)

2.IRFP450.pdf (6 pages)

3.IRFP450.pdf (9 pages)

Specifications of IRFP450

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 8.4A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

14A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

2600pF @ 25V

Power - Max

190W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Transistor Polarity

N Channel

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Drain Source On Resistance @ 10v

400mohm

Thermal Resistance

0.65Â°C/W

Current Rating

14A

Gate-to-drain Charge

53.3nC

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFP450
IRFP450IR

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Part Number

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Price

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Current page: 1 of 9
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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91233

S-81271-Rev. A, 16-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 14 A, dI/dt ≤ 130 A/µs, V

= 50 V, starting T

(Ω)

TO-247

= 25 °C, L = 7.0 mH, R

≤ V

= 10 V

, T

N-Channel MOSFET

Single

≤ 150 °C.

500

150

= 25 Ω, I

Power MOSFET

0.40

= 25 °C, unless otherwise noted

6-32 or M3 screw

at 10 V

= 14 A (see fig. 12).

for 10 s

= 25 °C

TO-247

IRFP450PbF

SiHFP450-E3

IRFP450

SiHFP450

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications.

SYMBOL

dV/dt

, T

device

stg

IRFP450, SiHFP450

design,

- 55 to + 150

LIMIT

300

± 20

500

760

190

8.7

1.5

8.7

3.5

1.1

low

Vishay Siliconix

on-resistance

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

and

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