RHU002N06T106 Rohm Semiconductor
RHU002N06T106
Manufacturer Part Number
RHU002N06T106
Description
MOSFET N-CH 60V 200MA SOT-323
Manufacturer
Rohm Semiconductor
Specifications of RHU002N06T106
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
200mA
Gate Charge (qg) @ Vgs
4.4nC @ 10V
Input Capacitance (ciss) @ Vds
15pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
4v, Umt3
Transistor Polarity
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2.4ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.4 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RHU002N06T106
RHU002N06T106TR
RHU002N06T106TR
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