2SK3019TL Rohm Semiconductor, 2SK3019TL Datasheet - Page 3

• Manufacturer Part Number: 2SK3019TL
• Description: MOSFET N-CH 30V .1A SOT416
• Manufacturer: Rohm Semiconductor

Specifications of 2SK3019TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 4V
• Voltage Vgs Max: 20V
• Transistor Case Style: EMT
• No. Of: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SK3019TLTR

Transistor
Fig.13 Switching time measurement circuit
Switching characteristics measurement circuit
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
Fig.10 Reverse drain current vs.
Fig.7 Static drain-source on-state
0
9
8
7
6
5
4
3
2
1
0
−50
SOURCE-DRAIN VOLTAGE : V
V
R
CHANNEL TEMPERATURE : Tch (°C)
GS
−25
G
=4V
resistance vs. channel
temperature
source-drain voltage (ΙΙ)
I
0
D
0.5
V
=100mA
GS
25
D.U.T.
0V
50
I
1
D
75
I
D
=50mA
100 125
Ta=25°C
Pulsed
SD
V
Pulsed
(V)
GS
R
V
=4V
DD
L
1.5
V
150
DS
0.5
50
20
10
5
2
1
0.005
0.002
0.001
0.1
0.05
0.02
0.01
Fig.11 Typical capacitance vs.
0.5
0.2
0.1
Fig.8 Forward transfer
0.0001
DRAIN-SOURCE VOLTAGE : V
0.2
0.0002 0.0005 0.001 0.002
Ta=−25°C
admittance vs. drain current
0.5
drain-source voltage
125°C
V
V
DRAIN CURRENT : I
25°C
75°C
GS
DS
1
Fig.14 Switching time waveforms
2
t
d (on)
0.005 0.01 0.02
10%
t
50%
on
5
10%
t
r
10
D
Pulse width
0.05
Ta =25°C
f=1MH
V
(A)
DS
C
C
C
GS
20
90%
oss
iss
rss
0.1 0.2
(V)
V
Pulsed
=0V
DS
Z
=3V
50
0.5
90%
200m
100m
1000
0.5m
0.2m
0.1m
50m
20m
10m
500
200
100
Fig.12 Switching characteristics
t
5m
2m
1m
50
20
10
d (off)
5
2
0.1
0
Fig.9 Reverse drain current vs.
t
t
0.2
d(on)
r
SOURCE-DRAIN VOLTAGE : V
t
off
t
d(off)
t
f
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
0.5
DRAIN CURRENT : I
50%
source-drain voltage (Ι)
t
f
10%
90%
0.5
1
Rev.C
2
5
2SK3019
Ta=125°C
10
1
D
−25°C
75°C
25°C
(mA)
20
Ta =25°C
V
V
R
Pulsed
V
Pulsed
SD
DD
GS
G
GS
50
=10Ω
(V)
=5V
=5V
=0V
3/3
1.5
100