MOSFET N-CH 30V .1A SOT-323

2SK3018T106

Manufacturer Part Number2SK3018T106
DescriptionMOSFET N-CH 30V .1A SOT-323
ManufacturerRohm Semiconductor
2SK3018T106 datasheet
 


Specifications of 2SK3018T106

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 Ohm @ 10mA, 4VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C100mAVgs(th) (max) @ Id1.5V @ 100µA
Input Capacitance (ciss) @ Vds13pF @ 5VPower - Max200mW
Mounting TypeSurface MountPackage / CaseSC-70-3, SOT-323-3
Transistor PolarityN ChannelContinuous Drain Current Id10mA
Drain Source Voltage Vds30VOn Resistance Rds(on)8ohm
Rds(on) Test Voltage Vgs4VVoltage Vgs Max20V
Operating TemperatureRoHS CompliantConfigurationSingle
Resistance Drain-source Rds (on)8 Ohm @ 4 VDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current0.1 A
Power Dissipation200 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Threshold Voltage Vgs Typ1.5VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Other names2SK3018T106TR  
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Transistor
2.5V Drive Nch MOS FET
2SK3018
Structure
Silicon N-channel
MOSFET
Applications
Interfacing, switching (30V, 100mA)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Packaging specifications
Package
Taping
Code
T106
Type
Basic ordering unit
3000
(pieces)
2SK3018
Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw≤10µs, Duty cycle≤1%
2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
External dimensions (Unit : mm)
UMT3
(1) Source
(2) Gate
(3) Drain
Symbol
Limits
Unit
V
30
V
DSS
±20
V
V
GSS
±100
I
mA
D
±400
1
I
mA
DP
2
P
200
mW
D
°C
Tch
150
−55 to +150
°C
Tstg
Symbol
Limits
°C / W
Rth(ch-a)
625
2SK3018
2.0
0.9
0.2
0.7
0.3
( 3 )
( 2 )
( 1 )
0.65
0.65
0.15
1.3
Each lead has same dimensions
Abbreviated symbol : KN
Equivalent circuit
Drain
Gate
Gate
Protection
Diode
Source
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Unit
Rev.B
1/3

2SK3018T106 Summary of contents

  • Page 1

    Transistor 2.5V Drive Nch MOS FET 2SK3018 Structure Silicon N-channel MOSFET Applications Interfacing, switching (30V, 100mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can ...

  • Page 2

    Transistor Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS(th) R DS(on) Static drain-source on-state resistance R DS(on) |Y Forward transfer admittance Input ...

  • Page 3

    Transistor 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. ...

  • Page 4

    Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...