2SK3018T106 Rohm Semiconductor, 2SK3018T106 Datasheet
2SK3018T106
Specifications of 2SK3018T106
Available stocks
Related parts for 2SK3018T106
2SK3018T106 Summary of contents
Page 1
Transistor 2.5V Drive Nch MOS FET 2SK3018 Structure Silicon N-channel MOSFET Applications Interfacing, switching (30V, 100mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can ...
Page 2
Transistor Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS(th) R DS(on) Static drain-source on-state resistance R DS(on) |Y Forward transfer admittance Input ...
Page 3
Transistor 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...