2SK3018T106 Rohm Semiconductor, 2SK3018T106 Datasheet
2SK3018T106
Manufacturer Part Number
2SK3018T106
Description
MOSFET N-CH 30V .1A SOT-323
Manufacturer
Rohm Semiconductor
Datasheet
1.2SK3018T106.pdf
(4 pages)
Specifications of 2SK3018T106
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
N Channel
Continuous Drain Current Id
10mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK3018T106TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3018T106
Manufacturer:
RENESAS
Quantity:
2 860
Part Number:
2SK3018T106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SK3018T106
Manufacturer:
ROHM
Quantity:
15 923
Transistor
2.5V Drive Nch MOS FET
2SK3018
Silicon N-channel
MOSFET
Interfacing, switching (30V, 100mA)
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
4) Drive circuits can be simple.
5) Parallel use is easy.
Channel to ambient
∗ With each pin mounted on the recommended lands.
Type
2SK3018
Structure
Applications
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Thermal resistance
∗
∗
portable equipment.
1 Pw≤10µs, Duty cycle≤1%
2 With each pin mounted on the recommended lands.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
T106
3000
Symbol
V
V
Tstg
Tch
P
I
DSS
GSS
I
DP
D
D
∗
Rth(ch-a)
∗
Symbol
2
1
−55 to +150
∗
Limits
±20
±100
±400
200
150
30
Limits
625
(1) Source
(2) Gate
(3) Drain
External dimensions (Unit : mm)
UMT3
mW
Unit
mA
mA
°C
°C
V
V
°C / W
Unit
Abbreviated symbol : KN
0.65
∗
( 3 )
( 2 )
2.0
1.3
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Equivalent circuit
0.65
Gate
0.3
( 1 )
Each lead has same dimensions
∗
0.2
Gate
Protection
Diode
0.15
0.9
0.7
Rev.B
2SK3018
Source
Drain
1/3
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2SK3018T106 Summary of contents
Page 1
Transistor 2.5V Drive Nch MOS FET 2SK3018 Structure Silicon N-channel MOSFET Applications Interfacing, switching (30V, 100mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can ...
Page 2
Transistor Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS(th) R DS(on) Static drain-source on-state resistance R DS(on) |Y Forward transfer admittance Input ...
Page 3
Transistor 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...