2SK3018T106 Rohm Semiconductor, 2SK3018T106 Datasheet - Page 2

MOSFET N-CH 30V .1A SOT-323

2SK3018T106

Manufacturer Part Number
2SK3018T106
Description
MOSFET N-CH 30V .1A SOT-323
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SK3018T106

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
N Channel
Continuous Drain Current Id
10mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK3018T106TR

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Transistor
Fig.4 Static drain-source on-state
Static drain-source on-state
resistance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
0.15
0.05
Fig.1 Typical output characteristics
0.1
0
0.5
0
50
20
10
5
2
1
0.001
resistance vs. drain current ( Ι )
DRAIN-SOURCE VOLTAGE : V
0.002
Parameter
1
Ta=125 °C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−25 °C
75 °C
25 °C
V
2
GS
2.5V
2V
=1.5V
3V
3
0.05
D
0.1
(A)
4
Ta=25°C
Pulsed
DS
V
Pulsed
(V)
GS
0.2
V
Symbol
R
R
V
=4V
(BR)DSS
|Y
t
t
I
I
C
C
DS(on)
DS(on)
C
GS(th)
d(on)
d(off)
GSS
DSS
5
t
t
oss
fs
iss
rss
r
f
0.5
|
Fig.5 Static drain-source on-state
Fig.2 Typical transfer characteristics
200m
100m
0.5m
0.2m
0.1m
Min.
50m
20m
10m
0.8
30
20
5m
2m
1m
0.5
50
20
10
0
5
2
1
0.001
resistance vs. drain current (ΙΙ)
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
0.002
=3V
Typ.
13
15
35
80
80
Ta=125°C
5
7
9
4
1
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
75°C
25°C
Max.
1.5
±1
13
1
8
2
Ta=125 °C
−25 °C
75 °C
25 °C
0.05
Unit
mS
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
D
0.1
3
(A)
V
Pulsed
GS
GS
0.2
(V)
=2.5V
V
I
V
V
I
I
V
V
V
f = 1MHz
I
V
R
R
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
L
G
= 10µA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 500Ω
= 10Ω
4
0.5
= 30V, V
= 3V, I
= 3V, I
= 5V
= ±20V, V
= 0V
= 5V
D
D
GS
1.5
0.5
= 100µA
= 10mA
Conditions
GS
GS
DD
2
0
1
−50
15
10
GS
Fig.3 Gate threshold voltage vs.
0
DS
5
= 2.5V
0
= 0V
= 4V
= 0V
CHANNEL TEMPERATURE : Tch ( °C )
Fig.6 Static drain-source
= 0V
−25
5V
GATE-SOURCE VOLTAGE : V
channel temperature
0
5
on-state resistance vs.
gate-source voltage
25
Rev.B
50
10
2SK3018
I
I
D
D
75
=0.1A
=0.05A
100 125 150
15
V
I
Pulsed
D
DS
Ta=25°C
Pulsed
GS
=0.1mA
=3V
(V)
2/3
20

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