2SK3065T100 Rohm Semiconductor, 2SK3065T100 Datasheet
2SK3065T100
Manufacturer Part Number
2SK3065T100
Description
MOSFET N-CH 60V 2A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SK3065T100.pdf
(4 pages)
Specifications of 2SK3065T100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
320 mOhm @ 1A, 4V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
160pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
20V
Transistor Case Style
SOT-89
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
0.32 Ohm @ 4 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK3065T100TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3065T100
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Small switching (60V, 2A)
2SK3065
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure
Silicon N-channel
MOS FET transistor
!Absolute maximum ratings (Ta = 25°C)
!Electrical characteristics (Ta = 25°C)
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation(Tc=25°C)
Channel temperature
Storage temperature
Static drain-source on-state
resistance
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
undervoltage actuation (2.5V actuation).
Pw ≤ 300µs, Duty cycle ≤ 1%
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
V
Symbol
R
R
Y
V
(BR)DSS
t
t
I
I
C
GS(th)
DS(on)
DS(on)
C
C
d(on)
d(off)
GSS
DSS
fs
t
t
oss
iss
rss
Symbol
r
f
∗
V
V
Tstg
Tch
I
I
P
I
DRP
GSS
I
DSS
DR
DP
D
D
∗ 1
∗ 1
Min.
0.8
1.5
60
−
−
−
−
−
−
−
−
−
−
−
−55∼+150
Typ.
0.25
0.35
160
120
Limits
85
25
20
50
70
±20
−
−
−
−
−
150
0.5
60
2
8
2
8
2
∗ 2
Max.
±10
0.32
0.45
1.5
10
−
−
−
−
−
−
−
−
−
Unit
Unit
°C
°C
µA
µA
pF
pF
pF
ns
ns
ns
ns
W
Ω
Ω
V
V
A
A
A
A
V
V
S
I
I
I
V
V
I
V
R
R
V
I
V
V
D
D
D
f = 1MHz
D
D
GS
DS
DS
DS
GS
GS
L
G
= 1A, V
= 1A, V
= 1A, V
= 1A, V
= 1mA, V
= 30Ω
= 10Ω
= 10V
= ±20V, V
= 60V, V
= 10V, I
= 0V
= 4V
Test Conditions
GS
GS
DS
DD
!External dimensions (Units : mm)
GS
ROHM : MPT3
E I A J : SC-62
D
= 4V
= 2.5V
= 10V
GS
= 1mA
DS
= 0V
30V
= 0V
= 0V
∗ A protection diode has been built in between the
!Internal equivalent circuit
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
Gate
0.4±0.1
1.5±0.1
Abbreviated symbol : KE
( 1 )
∗Gate
Protection
Diode
1.6±0.1
( 2 )
0.5±0.1
3.0±0.2
4.5
+0.2
−0.1
( 3 )
0.4±0.1
1.5±0.1
Drain
1.5±0.1
Source
0.4
+0.1
−0.05
2SK3065
(1) Gate
(2) Drain
(3) Source
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2SK3065T100 Summary of contents
Page 1
Transistors Small switching (60V, 2A) 2SK3065 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel ...
Page 2
Transistors !Packaging specifications Package Taping Code T100 Type Basic ordering unit 1000 (pieces) 2SK3065 !Electrical characteristic curves 3 When mounted 0.7 mm aluminum-ceramic board 100 125 150 ...
Page 3
Transistors 10 V =2.5V GS Pulsed Ta=125°C 75°C 1 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : Fig.7 Static Drain-Source On- State Resistance vs. Drain Current(ΙΙ =10V DS Pulsed Ta=−25°C 25°C 125°C 75°C ...
Page 4
Transistors 10 D=1 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 100µ 1m 10m 100m PULSE WIDTH : PW(s) Fig.16 Normarized Transient Thermal Resistance vs. Pulse Width !Switching characteristics measurement circuit ...