RSS100N03TB Rohm Semiconductor, RSS100N03TB Datasheet

MOSFET N-CH 30V 10A 8-SOIC

RSS100N03TB

Manufacturer Part Number
RSS100N03TB
Description
MOSFET N-CH 30V 10A 8-SOIC
Manufacturer
Rohm Semiconductor
Datasheet
1.RSS100N03TB.pdf (4 pages)

Specifications of RSS100N03TB

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1070pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RSS100N03TB
RSS100N03TBTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RSS100N03TB
Manufacturer:
SONY
Quantity:
49
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
RSS100N03TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RSS100N03TB1
Manufacturer:
ROHM
Quantity:
2 755
Transistor
Switching (30V, ±10A)
RSS100N03
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC/DC converter.
•Silicon N-channel MOS FET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
1 Pw 10 s, Duty cycle 1%
2 Mounted on a ceramic board.
Applications
Features
Structure
Absolute maximum ratings (Ta=25°C)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
55 to 150
Limits
150
1.6
6.4
30
20
10
40
2
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
External dimensions (Unit : mm)
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
SOP8
(8)
(1)
Unit
W
V
V
A
A
A
A
C
C
2
(7)
(2)
1
1
2
(6)
(3)
1
1.27
5.0 0.2
(5)
(4)
0.1
0.4 0.1
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
RSS100N03
0.2 0.1
1/3

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RSS100N03TB Summary of contents

Page 1

Transistor Switching (30V, ±10A) RSS100N03 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter. Structure •Silicon N-channel MOS FET Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage ...

Page 2

Transistor Thermal resistance (Ta=25°C) Parameter Channel to ambient Rth (ch-a) Mounted on a ceramic board. Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage ...

Page 3

Transistor 100 V 10V DS Pulsed 10 Ta 125 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : V (V) GS Fig.4 Typical Transfer Characteristics ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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