BSS83,215 NXP Semiconductors, BSS83,215 Datasheet

MOSFET N-CH 10V 50MA SOT-143B

BSS83,215

Manufacturer Part Number
BSS83,215
Description
MOSFET N-CH 10V 50MA SOT-143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSS83,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel
Voltage - Rated
10V
Current Rating
50mA
Mounting Type
Surface Mount
Power - Max
230mW
Fet Type
MOSFET N-Channel, Metal Oxide
Vgs(th) (max) @ Id
2V @ 1µA
Current - Continuous Drain (id) @ 25° C
50mA
Drain To Source Voltage (vdss)
10V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 Ohm @ 100µA, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
45 Ohm @ 10 V
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
0.05 A
Power Dissipation
230 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1659-2
933418060215
BSS83 T/R
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BSS83
MOSFET N-channel enhancement switching transistor
Rev. 03 — 21 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BSS83,215

BSS83,215 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors MOSFET N-channel enhancement switching transistor DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate ...

Page 3

... NXP Semiconductors MOSFET N-channel enhancement switching transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air ...

Page 4

... NXP Semiconductors MOSFET N-channel enhancement switching transistor CHARACTERISTICS unless otherwise specified amb Drain-source breakdown voltage Source-drain breakdown voltage Drain-substrate breakdown voltage nA; open source GB D Source-substrate breakdown voltage nA; open drain GB D Drain-source leakage current 6 Source-drain leakage current 6 Forward transconductance kHz Gate-source threshold voltage ...

Page 5

... NXP Semiconductors MOSFET N-channel enhancement switching transistor Pulse generator 0 1 0,01 handbook, full pagewidth 0 630 T.U MBK297 Fig.2 Switching times test circuit and input and output waveforms. 60 handbook, halfpage 4 (mA Fig typical values. SB 90% INPUT 10 90% OUTPUT MDA250 handbook, halfpage (mA) 3 ...

Page 6

... NXP Semiconductors MOSFET N-channel enhancement switching transistor 50 handbook, halfpage I D (mA Fig typical values 1.2 handbook, halfpage VGS = (mA) 0.8 0 Fig typical values. SB MDA252 handbook, halfpage I D (mA ( MDA254 100 V DSon (mV) Rev November 2007 Product specification Fig GS(th) BSS83 MDA253 GSth ( ...

Page 7

... NXP Semiconductors MOSFET N-channel enhancement switching transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 ...

Page 8

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 9

... NXP Semiconductors Revision history Revision history Document ID Release date BSS83_N_3 20071121 • Modifications: Page 2; column 2; Marking code; row 1 changed BSS83_CNV_2 19910401 MOSFET N-channel enhancement switching transistor Data sheet status Change notice Product data sheet - Product specification - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘ ...

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