MOSFET N-CH 60V 5A DPAK

2SK2503TL

Manufacturer Part Number2SK2503TL
DescriptionMOSFET N-CH 60V 5A DPAK
ManufacturerRohm Semiconductor
2SK2503TL datasheet
 


Specifications of 2SK2503TL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs135 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id2.5V @ 1mA
Input Capacitance (ciss) @ Vds520pF @ 10VPower - Max20W
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
Transistor PolarityN ChannelContinuous Drain Current Id2.5A
Drain Source Voltage Vds60VOn Resistance Rds(on)135mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C ToConfigurationSingle
Resistance Drain-source Rds (on)0.135 Ohm @ 10 VDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current5 A
Power Dissipation20000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Threshold Voltage Vgs Typ2.5VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Other names2SK2503TL
2SK2503TLTR
  
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Transistors
4V Drive Nch MOS FET
2SK2503
Structure
Silicon N-channel MOS FET
Features
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SK2503
Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Pulsed
Continuous
Reverse drain
current
Pulsed
Total power dissipation(Tc=25 °C )
Channel temperature
Storage temperature
Pw
10µs, Duty cycle
1%
External dimensions (Unit : mm)
CPT3
(1)Gate
(2)Drain
(3)Source
Inner circuit
Taping
TL
2500
(1) Gate
(2) Drain
(3) Source
Symbol
Limits
Unit
V
60
V
DSS
V
± 20
V
GSS
I
5
A
D
I
20
A
DP
I
5
A
DR
I
20
A
DRP
P
20
W
D
°C
Tch
150
−55 to +150
°C
Tstg
2SK2503
6.5
5.1
2.3
0.5
0.75
0.65
0.9
2.3
2.3
(1)
(2)
(3)
0.5
1.0
Abbreviated symbol : K2503
(1)
(2)
(3)
Rev.A
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2SK2503TL Summary of contents

  • Page 1

    Transistors 4V Drive Nch MOS FET 2SK2503 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area drive. 5) Drive circuits can be simple. 6) Parallel use is easy. ...

  • Page 2

    Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off ...

  • Page 3

    Transistors Electrical characteristics curve 0 25°C Single pulse 0.1 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.1 Maximum Safe Operating Area 4.0 = 10V ...

  • Page 4

    Transistors 10 = Pulsed 5 Ta=125°C 75°C 2 25°C −25°C 1 0.5 0.2 0.1 0.05 0 0.5 1.0 1.5 (V) SOURCE-DRAIN VOLTAGE : V SD Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) 1000 Ta=25°C =30V ...

  • Page 5

    Transistors Switching characteristics measurement circuit D.U. Fig.15 Switching Time Test Circuit Pulse Width 90% 50 10 d(on d(off) ...

  • Page 6

    Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...