MOSFET N-CH 100V 5A DPAK

2SK2504TL

Manufacturer Part Number2SK2504TL
DescriptionMOSFET N-CH 100V 5A DPAK
ManufacturerRohm Semiconductor
2SK2504TL datasheet
 

Specifications of 2SK2504TL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs220 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id2.5V @ 1mA
Input Capacitance (ciss) @ Vds520pF @ 10VPower - Max20W
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.22 Ohm @ 4 VDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current5 A
Power Dissipation20000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Other names2SK2504TL
2SK2504TLTR
  
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Transistors
Electrical characteristics curve
50
10
5
1
0.5
Tc = 25°C
Single pulse
0.1
1
5
10
50
100
200
(V)
DRAIN-SOURCE VOLTAGE : V
DS
Fig.1 Maximum Safe Operating Area
4.0
= 10V
V
DS
=1mA
l
D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
−25
0
25
50
75
100 125
150
°C
(
)
CHANNEL TEMPERATURE : T ch
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0.6
Ta=25°C
Pulsed
0.4
=5A
l
D
2.5A
0.2
0
0
5
10
15
(V)
GATE-SOURCE VOLTAGE : V
GS
Fig.7 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
10
Ta = 25°C
10V
Pulsed
9
8V
6V
8
5V
4V
7
6
5
4
3
=3V
V
GS
2
1
0
0
1
2
3
4
DRAIN-SOURCE VOLTAGE : V
DS
Fig.2 Typical Output Characteristics
10
= 10V
V
GS
Pulsed
Ta=125°C
1
75°C
25°C
−25°C
0.1
0.01
0.01
0.1
1
(A)
DRAIN CURRENT : I
D
Fig.5 Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
0.6
V
GS
Pulsed
0.5
0.4
0.3
=5A
I
D
0.2
2.5A
0.1
0
−50
−25
20
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : Tch
Fig.8 Static Drain-Source On-State Resistance
vs. Channel Temperature
2SK2504
10
= 10V
V
DS
Pulsed
5
Ta=125°C
75°C
2
25°C
−25°C
1
0.5
0.2
0.1
0.05
0.02
0.01
5
0
1
2
3
4
(V)
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristics
10
= 4V
V
GS
Pulsed
5
2
Ta=125°C
1
75°C
0.5
25°C
−25°C
0.2
0.1
0.05
0.01
0.01
10
0.01
0.02
0.05 0.1
0.2
0.5
1.0 2.0
(A)
DRAIN CURRENT : I
D
Fig.6 Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙ )
  
100
= 10V
= 10V
V
DS
Pulsed
50
20
10
Ta= −25°C
25°C
5
75°C
125°C
2
1
0.5
0.2
0.1
0.01 0.02 0.05
0.1 0.2
0.5
1
(°C)
DRAIN CURRENT : I
D
Fig.9 Forward Transfer Admittance
vs. Drain Current
Rev.A
5
6
(V)
GS
5.0 10
5.0 10
2.0
(A)
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