PSMN9R0-30YL,115 NXP Semiconductors, PSMN9R0-30YL,115 Datasheet
PSMN9R0-30YL,115
Specifications of PSMN9R0-30YL,115
934063067115
PSMN9R0-30YL T/R
Related parts for PSMN9R0-30YL,115
PSMN9R0-30YL,115 Summary of contents
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... PSMN9R0-30YL N-channel mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Graphic symbol mbb076 Min - ≤ 80 nJ; - DS(AL kΩ -20 Figure 1 - Figure -55 175 -55 175 ...
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... N-channel mΩ logic level MOSFET in LFPAK 003aac545 120 P der (%) 150 200 T mb (°C) Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL 100 150 Normalized total power dissipation as a function of mounting base temperature 10 μs 100 μ 100 ms V (V) 10 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN9R0-30YL Product data sheet N-channel mΩ logic level MOSFET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Min Typ Max - 1.9 2.7 003aac544 δ ...
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... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Min Typ Max Unit 1.3 1.7 2. µ 100 µ ...
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... A/µ 003aac534 V ( 2.8 2.6 2.4 2 (V) DS Fig 6. 003aac539 (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Min Typ - 0. ( 150 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 14 R DSon (mΩ ...
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... V (V) GS Fig 10. Drain-source on-state resistance as a function 003aab271 typ max Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL 12 R DSon (mΩ gate-source voltage; typical values (th) (V) max 2 typ ...
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... Fig 14. Gate charge waveform definitions 003aac540 1400 C (pF) 1200 1000 800 (V) DS 600 400 200 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL GS(pl) V GS(th GS1 GS2 G(tot) C iss ...
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... PSMN9R0-30YL Product data sheet N-channel mΩ logic level MOSFET in LFPAK ( 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL 003aac536 25 °C 0.8 1.0 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... Change notice Product data sheet - Product data sheet - Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Supersedes PSMN9R0-30YL v.3 PSMN9R0-30YL v.2 PSMN9R0-30YL v.1 - © NXP B.V. 2011. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 9 March 2011 PSMN9R0-30YL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 March 2011 Document identifier: PSMN9R0-30YL ...