2SK2094TL Rohm Semiconductor, 2SK2094TL Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single 2SK2094TL
Manufacturer Part Number
2SK2094TL
Description
MOSFET N-CH 60V 2A DPAK
Manufacturer
Rohm Semiconductor
Specifications of 2SK2094TL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
400pF @ 10V
Power - Max
10W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
10000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK2094TL 2SK2094TLTR
Transistors
4V Drive Nch MOS FET
2SK2094
Silicon N-channel MOS FET
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Type
2SK2094
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation(Tc=25 °C )
Channel temperature
Storage temperature
∗
Pw
≤
300µs, Duty cycle
Package
Code
Basic ordering unit
(pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
≤
2%
Taping
2500
TL
Symbol
V
V
Tstg
I
Tch
I
I
DRP
P
DSS
GSS
I
DR
DP
D
D
∗
∗
−55 to +150
Limits
± 20
150
60
10
2
8
2
8
Unit
°C
°C
W
(1) Gate
(2) Drain
(3) Source
V
V
A
A
A
A
External dimensions (Unit : mm)
Inner circuit
(1)Gate
(2)Drain
(3)Source
CPT3
(1)
Abbreviated symbol : K2094
0.75
0.9
(1)
(2)
2.3
6.5
5.1
(2)
(3)
0.65
2.3
Rev.A
(3)
2SK2094
2.3
0.5
0.5
1.0
1/4
Related parts for 2SK2094TL
2SK2094TL Summary of contents
Transistors 4V Drive Nch MOS FET 2SK2094 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area drive. 5) Drive circuits can be simple. 6) Parallel use is easy. ...
Transistors Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...
Transistors Electrical characteristics curve 0.5 0.2 0.1 0. =25°C 0.02 Single pulse 0.01 0.1 0.2 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.1 Maximum Safe Operating Area ...
Transistors 5 = Pulsed 2 Ta=125°C 1 75°C 25°C 0.5 −25°C 0.2 0.1 0.05 0.02 0.01 0.005 0 0.5 1 1.5 (V) SOURCE-DRAIN VOLTAGE : V SD Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) Fig.10 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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