PSMN4R5-40PS,127 NXP Semiconductors, PSMN4R5-40PS,127 Datasheet
PSMN4R5-40PS,127
Specifications of PSMN4R5-40PS,127
934063908127
Related parts for PSMN4R5-40PS,127
PSMN4R5-40PS,127 Summary of contents
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... PSMN4R5-40PS N-channel 40 V 4.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Figure ≤ 10 µs; pulsed °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° ° 100 j(init Ω unclamped Rev. 02 — 25 June 2009 PSMN4R5-40PS Graphic symbol mbb076 3 Version SOT78 Min Max - - 100 Figure 3 - 545 - 148 -55 175 -55 175 - 100 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon Rev. 02 — 25 June 2009 PSMN4R5-40PS 03aa16 50 100 150 200 T (°C) mb 003aad297 10 μs 100 μ 100 (V) DS © NXP B.V. 2009. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN4R5-40PS_2 Product data sheet N-channel 40 V 4.6 mΩ standard level MOSFET Conditions see Figure Rev. 02 — 25 June 2009 PSMN4R5-40PS Min Typ Max - 0.65 1 003aad007 t p δ ...
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... D j Figure 13 MHz see Figure 14; see Figure see Figure 14; see Figure see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 02 — 25 June 2009 PSMN4R5-40PS Min Typ Max Unit 4 µ µ 100 100 6.7 mΩ [1] - 3.9 4.6 mΩ Ω ...
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... ° 003aad020 10 R DSon (mΩ (V) DS Fig 6. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 25 June 2009 PSMN4R5-40PS Min Typ Max Unit - 0.75 1 003aad021 (V) = 6 100 150 200 250 I (A) D © NXP B.V. 2009. All rights reserved. ...
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... Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad027 25 R DSon (mΩ 100 0 I (A) D Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 02 — 25 June 2009 PSMN4R5-40PS 003aad026 C iss C rss (V) GS 003aad028 (V) GS © NXP B.V. 2009. All rights reserved. ...
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... N-channel 40 V 4.6 mΩ standard level MOSFET 03aa35 5 V GS(th) (V) max − (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature 03aa27 V Fig 14. Gate charge waveform definitions 120 180 ( ° Rev. 02 — 25 June 2009 PSMN4R5-40PS 003aad280 max typ min 0 60 120 T (° GS(pl) V GS(th GS1 GS2 ...
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... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° 0.2 0.4 0.6 0.8 Rev. 02 — 25 June 2009 PSMN4R5-40PS 003aad025 C iss C oss C rss (V) DS 003aad023 = 25 ° (V) SD © NXP B.V. 2009. All rights reserved. ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 25 June 2009 PSMN4R5-40PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...
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... Various changes to content. PSMN4R5-40PS_1 20090507 PSMN4R5-40PS_2 Product data sheet N-channel 40 V 4.6 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - Rev. 02 — 25 June 2009 PSMN4R5-40PS Supersedes PSMN4R5-40PS_1 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 25 June 2009 PSMN4R5-40PS © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN4R5-40PS_2 All rights reserved. Date of release: 25 June 2009 ...