PHB191NQ06LT,118 NXP Semiconductors, PHB191NQ06LT,118 Datasheet

PHB191NQ06LT,118

Manufacturer Part Number

PHB191NQ06LT,118

Description

MOSFET N-CH 55V 75A D2PAK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.PHB191NQ06LT118.pdf (13 pages)

Specifications of PHB191NQ06LT,118

Package / Case

D²Pak, TO-263 (2 leads + tab)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.7 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

95.6nC @ 5V

Input Capacitance (ciss) @ Vds

7665pF @ 25V

Power - Max

300W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0037 Ohm @ 10 V

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

15 V

Continuous Drain Current

75 A

Power Dissipation

300000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

568-2188-2
934058543118
PHB191NQ06LT /T3

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1. Product proﬁle

2. Pinning information

Table 1:

[1]

Pin Description

It is not possible to make connection to pin 2 of the SOT404 package.

gate (g)

drain (d)

source (s)

mounting base;

connected to

drain (d)

Pinning - SOT78 (TO-220AB) and SOT404 (D

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

Simpliﬁed outline

Logic level N-channel enhancement mode ﬁeld-effect transistor in a plastic package

using TrenchMOS™ technology.

SOT78 (TO-220AB)

PHP/PHB191NQ06LT

N-channel TrenchMOS™ logic level FET

Rev. 01 — 05 May 2004

Logic level threshold

Motors, lamps, solenoids

DC-to-DC converters

tot

1 2

300 W

55 V

MBK106

-PAK), simpliﬁed outline and symbol

SOT404 (D

-PAK)

Very low on-state resistance.

Uninterruptible power supplies

General industrial applications.

MBK116

DSon

75 A

3.7 m .

Symbol

MBB076

Product data

Related parts for PHB191NQ06LT,118

PHB191NQ06LT,118 Summary of contents

Page 1

Product proﬁle 1.1 Description Logic level N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D Pin ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name PHP191NQ06LT TO-220AB 2 PHB191NQ06LT D -PAK 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting base th(j-mb) R thermal resistance from junction to ambient th(j-a) SOT78 SOT404 5.1 Transient thermal impedance 1 Z th(j-mb) (K/W) = 0.5 ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 240 3 (A) 160 0 Fig 5. Output characteristics: drain current as a function of ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) 2 max 1.5 typ 1 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors ( 175 0.3 0.6 175 and Fig 12. Source (diode forward) current as ...

Page 9

Philips Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB D L DIMENSIONS (mm are the original dimensions UNIT 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note ...

Page 10

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 11

Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040505 - Product data (9397 750 13168) 9397 750 13168 Product data PHP/PHB191NQ06LT N-channel TrenchMOS™ logic level FET Rev. 01 — 05 May 2004 © Koninklijke ...

Page 12

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualiﬁcation III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 13

Philips Semiconductors Contents 1 Product proﬁ 1.1 Description . . . . . ...

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