IRFL4310TRPBF International Rectifier, IRFL4310TRPBF Datasheet

IRFL4310TRPBF

Manufacturer Part Number

IRFL4310TRPBF

Description

MOSFET N-CH 100V 1.6A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFL4310TRPBF.pdf (9 pages)

2.IRFL4310PBF.pdf (4 pages)

Specifications of IRFL4310TRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

200 mOhm @ 1.6A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

1.6A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

330pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

1.6 A

Gate Charge, Total

17 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

1 W

Resistance, Drain To Source On

0.2 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

34 ns

Time, Turn-on Delay

7.8 ns

Transconductance, Forward

1.5 S

Voltage, Breakdown, Drain To Source

100 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

1.6 A

Mounting Style

SMD/SMT

Gate Charge Qg

17 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRFL4310TRPBF
IRFL4310TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFL4310TRPBF

Manufacturer:

International Rectifier

Quantity:

39 301

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL4310TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFL4310TRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRFL4310TRPBF

Quantity:

20 550

Company:

H&T Electronics

Part Number:

IRFL4310TRPBF

Quantity:

1 750

Company:

H&T Electronics

Part Number:

IRFL4310TRPBF

Quantity:

1 654

Current page: 1 of 9
Download datasheet (663Kb)

l Surface Mount

l Dynamic dv/dt Rating

l Fast Switching

l Ease of Paralleling

l Advanced Process Technology

l Ultra Low On-Resistance

l Lead-Free

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

Description

Absolute Maximum Ratings

HEXFET

dv/dt

θJA

@ T

STG

= 25°C

= 70°C

= 25°C

Power MOSFET

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

IRFL4310PbF

-55 to + 150

S O T -2 2 3

Max.

0.10

± 20

2.2

1.6

1.3

2.1

1.0

8.3

5.0

1.6

Max.

120

DS(on)

DSS

= 1.6A

= 100V

= 0.20Ω

PD - 95144

mW/°C

Units

°C/W

V/ns

°C

04/22/04

Related parts for IRFL4310TRPBF

IRFL4310TRPBF Summary of contents

Page 1

... Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFL4310PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Related keywords

irfl4105
irfl4315
irfl4310
irfl4310tr
irfl4315pbf
irfl4310trpbf
irfl4310pbf
IRFL4310TRPBF datasheet
IRFL4310TRPBF data sheet
IRFL4310TRPBF pdf datasheet
IRFL4310TRPBF component
IRFL4310TRPBF part
IRFL4310TRPBF distributor
IRFL4310TRPBF RoHS
IRFL4310TRPBF datasheet download

IRFL4310TRPBF International Rectifier, IRFL4310TRPBF Datasheet

IRFL4310TRPBF

Specifications of IRFL4310TRPBF

Available stocks

Related parts for IRFL4310TRPBF

IRFL4310TRPBF Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Related keywords