IRFL014NTRPBF International Rectifier, IRFL014NTRPBF Datasheet

IRFL014NTRPBF

Manufacturer Part Number

IRFL014NTRPBF

Description

MOSFET N-CH 55V 1.9A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFL014NTRPBF.pdf (8 pages)

2.IRFL014NPBF.pdf (4 pages)

Specifications of IRFL014NTRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

160 mOhm @ 1.9A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

1.9A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

190pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

1.9 A

Gate Charge, Total

7 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

2.1 W

Resistance, Drain To Source On

0.16 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

12 ns

Time, Turn-on Delay

6.6 ns

Transconductance, Forward

1.6 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

1.9 A

Mounting Style

SMD/SMT

Gate Charge Qg

7 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRFL014NPBFTR
IRFL014NTRPBF
IRFL014NTRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL014NTRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFL014NTRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRFL014NTRPBF

Quantity:

12 000

Current page: 1 of 8
Download datasheet (159Kb)

www.irf.com

Description

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Fifth Generation HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

MOSFETs from International

power MOSFETs are well

Parameter

@ 10V**

@ 10V*

Typ.

IRFL014NPbF

HEXFET

-55 to + 150

Max.

1.7

SOT-223

± 20

2.7

1.9

1.5

2.1

1.0

8.3

0.1

5.0

Max.

Power MOSFET

120

DS(on)

DSS

= 1.9A

= 0.16Ω

= 55V

mW/°C

Units

V/ns

°C

06/07/04

Related parts for IRFL014NTRPBF

IRFL014NTRPBF Summary of contents

Page 1

Surface Mount l l Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l l Fast Switching Fully Avalanche Rated l l Lead-Free Description ® Fifth Generation HEXFET MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely ...

Page 2

IRFL014NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 20µs PULSE WIDTH T = 25°C C 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRFL014NPbF 350 1MHz iss 300 rss oss iss 250 C oss 200 150 C 100 ...

Page 5

Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors Fig 9b. Gate Charge ...

Page 6

IRFL014NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 120 15V 100 DRIVER ...

Page 7

HEXFET PRODUCT MARKING T HIS IS AN IRFL014 INT ERNAT IONAL FL014 RECT IFIER LOGO T OP www.irf.com PART NUMBER 314P EMBLY S ITE DAT E CODE CODE (YYWW YEAR WW = WEEK P ...

Page 8

IRFL014NPbF 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. ...

Related keywords

irfl014
irfl024z
irfl014pbf
irfl014npbf
IRFL014NTRPBF datasheet
IRFL014NTRPBF data sheet
IRFL014NTRPBF pdf datasheet
IRFL014NTRPBF component
IRFL014NTRPBF part
IRFL014NTRPBF distributor
IRFL014NTRPBF RoHS
IRFL014NTRPBF datasheet download