CPC3703CTR Clare, CPC3703CTR Datasheet

MOSFET N-CH 250V 360MA SOT-89

CPC3703CTR

Manufacturer Part Number
CPC3703CTR
Description
MOSFET N-CH 250V 360MA SOT-89
Manufacturer
Clare
Datasheets

Specifications of CPC3703CTR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
4 Ohm @ 200mA, 0V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
360mA
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
DS-CPC3703-R03
Features
Applications
Package Pinout
Ignition Modules
Normally-on Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Depletion mode device offers low R
temperatures
Low on resistance 4 ohms max. at 25ºC
High input impedance
High breakdown voltage 250V
Low V
Small package size SOT89
Pb
BV
BV
250V
DSX
DGX
GS(off)
/
2002/95/EC
RoHS
voltage -1.6 to -3.9V
R
G
(max)
DS(ON)
(SOT89)
D
S
e
3
I
DSS
360mA
(min)
D
DS(ON)
Package
SOT-89
at cold
www.clare.com
Circuit Symbol
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3703
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4Ω maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
CPC3703CTR
N-Channel Depletion-Mode
Description
SOT89 (100/Tube)
SOT89 (2000/Reel)
G
Vertical DMOS FETs
S
D
CPC3703
1

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CPC3703CTR Summary of contents

Page 1

... The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3703C CPC3703CTR Circuit Symbol www.clare.com CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs Description ...

Page 2

... ISS 25V OSS 1MHz RSS 25V d(on 150mA -10V d(off 50Ω GEN -5V 90% GENERATOR t (OFF d(OFF) F 10% 90% www.clare.com θ ºC/W 15 360mA Min Typ Max =100µA 250 - =1mA -1.6 - -3.9 D =1mA - - 4 100 =125º =15V 300 - =200mA - - 1.1 = 10V 225 ...

Page 3

... I (mA) D On-Resistance vs. Drain Current (V =0V) GS 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I (A) D www.clare.com CPC3703 V & R Vs. Temperature GS(OFF) ON 5.5 V =10V DS 5.0 I =1mA D V =0V 4 =200mA ON D 4.0 3.5 3 ...

Page 4

... The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage ...

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