STN3NF06L STMicroelectronics, STN3NF06L Datasheet

MOSFET N-CH 60V 4A SOT223

STN3NF06L

Manufacturer Part Number
STN3NF06L
Description
MOSFET N-CH 60V 4A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN3NF06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 5V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
4 A
Power Dissipation
3300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3177-2

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Features
Application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
June 2008
STN3NF06L
Exceptional dv/dt capability
Avalanche rugged technology
100% avalanche tested
Low threshold drive
Switching applications
Type
STN3NF06L
Order code
Device summary
(@Tjmax)
V
60 V
DSS
R
< 0.1 Ω
DS(on)
max
Marking
3NF06L
4 A
I
D
N-channel 60 V, 0.07 Ω , 4 A, SOT-223
Rev 8
Figure 1.
STripFET™ II Power MOSFET
Package
SOT-223
Internal schematic diagram
2
SOT-223
STN3NF06L
1
2
3
Tape and reel
Packaging
www.st.com
1/12
12

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STN3NF06L Summary of contents

Page 1

... Table 1. Device summary Order code STN3NF06L June 2008 N-channel 60 V, 0.07 Ω SOT-223 STripFET™ II Power MOSFET R DS(on max < 0.1 Ω Figure 1. Marking Package 3NF06L SOT-223 Rev 8 STN3NF06L SOT-223 Internal schematic diagram Packaging Tape and reel www.st.com 1/12 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN3NF06L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STN3NF06L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope (4) E Single pulse avalanche energy AS T Operating junction temperature ...

Page 4

... R G (see Figure 14 =4.7 Ω (see Figure 14) Min. Typ 250 µ 1 1.5 A 0.085 Min. Typ. =1 340 = 1.5 2.8 Min. Typ STN3NF06L Max. Unit V 1 µA 10 µA 100 nA ± 2.8 V Ω 0.10 Ω 0.12 Max. Unit Max. Unit ...

Page 5

... STN3NF06L Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STN3NF06L ...

Page 7

... STN3NF06L Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 13. Normalized breakdown voltage vs. temperature 7/12 ...

Page 8

... Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform STN3NF06L ...

Page 9

... STN3NF06L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STN3NF06L mils MIN. TYP. MAX. 89.4 90.6 91.7 179.9 181.1 182.3 7.9 15.7 23.6 24.8 25.6 26.4 59.1 63 66.9 12.6 114.2 118.1 122.1 26.4 27.6 28.7 263.8 275 ...

Page 11

... STN3NF06L 5 Revision history Table 8. Document revision history Date 21-Jun-2004 04-Oct-2006 01-Feb-2007 12-Jun-2008 Revision 5 Complete version. 6 New template, no content change. 7 Typo mistake on Table 8 Corrected marking on Revision history Changes 2. Table 1 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN3NF06L ...

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