IRF7807D2TRPBF International Rectifier, IRF7807D2TRPBF Datasheet
IRF7807D2TRPBF
Specifications of IRF7807D2TRPBF
IRF7807D2TRPBF
IRF7807D2TRPBFTR
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IRF7807D2TRPBF Summary of contents
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... HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Q gsync Synch FET* Total Gate ...
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VGS TOP 4.5V 3.5V 3.0V BOTTOM 2.5V 10 380µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 70 VGS TOP 4.5V 60 3.5V 3.0V 2.5V 50 2.0V BOTTOM ...
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1MHz iss rss 1600 oss ds gd 1200 C iss C oss 800 400 C ...
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7.0A 0.02 0.01 2.0 4.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 9. On-Resistance Vs. Gate Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 1 ...
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Mosfet, Body Diode & Schottky Diode Characteristics 100 Tj = 125° 25° 0.1 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics 6 ...
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SO-8 (Fetky) Package Outline 0.25 [.010 0.25 [.010 NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. ...
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SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...