STD4NS25T4 STMicroelectronics, STD4NS25T4 Datasheet

MOSFET N-CH 250V 4A DPAK

STD4NS25T4

Manufacturer Part Number
STD4NS25T4
Description
MOSFET N-CH 250V 4A DPAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STD4NS25T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
355pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
900mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Transistor Case Style
D-PAK
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.9 Ohms
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8479-2
STD4NS25T4

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STD4NS25T4
Manufacturer:
STM
Quantity:
1 399
Part Number:
STD4NS25T4
Manufacturer:
ST
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Part Number:
STD4NS25T4
Manufacturer:
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Quantity:
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
February 2001
STD4NS25
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.9
250 V
V
DSS
R
< 1.1
DS(on)
C
GS
Parameter
= 25°C
N-CHANNEL 250V - 0.9 - 4A DPAK/IPAK
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
4 A
I
D
(1) I
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
4A, di/dt 300 A/ s, V
TO-252
DPAK
1
3
–65 to 150
DD
Value
± 20
250
250
150
2.5
0.4
16
50
V
4
5
(BR)DSS
STD4NS25
, Tj T
TO-251
IPAK
jMAX
1
2
W/°C
V/ns
Unit
3
°C
°C
W
V
V
V
A
A
A
1/9

Related parts for STD4NS25T4

STD4NS25T4 Summary of contents

Page 1

... ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications ...

Page 2

STD4NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Turn-off- Delay Time d(Voff) Fall Time ...

Page 4

STD4NS25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STD4NS25 5/9 ...

Page 6

STD4NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. ...

Page 8

STD4NS25 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 8/9 TO-251 (IPAK) MECHANICAL DATA mm TYP. ...

Page 9

... STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © ...

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