IRF3717TRPBF International Rectifier, IRF3717TRPBF Datasheet

MOSFET N-CH 20V 20A 8-SOIC

IRF3717TRPBF

Manufacturer Part Number
IRF3717TRPBF
Description
MOSFET N-CH 20V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3717TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.4 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.45V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
2890pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF3717PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3717TRPBF
Manufacturer:
International Rectifier
Quantity:
43 609
Part Number:
IRF3717TRPBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
l
Benefits
l
l
l
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
Notes  through
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
and Current
@T
@T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Lead-Free
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
Parameter
Parameter
f
GS
GS
@ 10V
@ 10V
V
20V
DSS
G
S
S
S
1
2
3
4
4.4m @V
Top View
Typ.
IRF3717PbF
–––
–––
R
DS(on)
-55 to + 150
HEXFET Power MOSFET
8
7
6
5
Max.
0.02
± 20
160
2.5
1.6
20
20
16
D
D
D
D
A
A
GS
max
Max.
= 10V
20
50
SO-8
20A
Units
Units
W/°C
°C/W
I
°C
W
D
V
A
8/10/04
1

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IRF3717TRPBF Summary of contents

Page 1

Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on) l Fully Characterized Avalanche Voltage and Current Absolute Maximum ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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