STS17NH3LL STMicroelectronics, STS17NH3LL Datasheet

MOSFET N-CH 30V 17A 8-SOIC

STS17NH3LL

Manufacturer Part Number
STS17NH3LL
Description
MOSFET N-CH 30V 17A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS17NH3LL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 25V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5760-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS17NH3LL
Manufacturer:
ST
0
Part Number:
STS17NH3LL
Manufacturer:
ST
Quantity:
20 000
Features
1. This value is rated according to Rthj-pcb
Applications
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
Table 1.
December 2007
STS17NH3LL
Optimal R
Conduction losses reduced
Improved junction-case thermal resistance
Low threshold device
Switching application
Type
STS17NH3LL
Order code
Device summary
DS(on)
x Qg trade-off @ 4.5 V
V
30V
DSS
STripFET™ Power MOSFET for DC-DC conversion
<0.0057Ω
R
DS(on)
Marking
17H3LL-
17A
N-channel 30 V - 0.004 Ω - 17 A - SO-8
I
D
(1)
Rev 3
Figure 1.
Package
SO-8
Internal schematic diagram
STS17NH3LL
SO-8
Tape & reel
Packaging
www.st.com
1/12
12

Related parts for STS17NH3LL

STS17NH3LL Summary of contents

Page 1

... Power MOSFET in SO-8 ever produced. Table 1. Device summary Order code STS17NH3LL December 2007 N-channel 0.004 Ω SO DS(on) D (1) <0.0057Ω 17A Figure 1. Marking 17H3LL- Rev 3 STS17NH3LL SO-8 Internal schematic diagram Package Packaging SO-8 Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS17NH3LL . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STS17NH3LL 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM (1) P Total dissipation at T tot T Storage temperature stg Tj Operating junction temperature 1. This value is rated according to Rthj-pcb 2. Pulse width limited by safe operating area Table 3 ...

Page 4

... 4 Parameter Test conditions V =25 V, f=1 MHz = =4 (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain STS17NH3LL Min Typ. Max = ±100 = 250 µ 8.5 A 0.004 0.0057 D = 8.5 A 0.005 0.0075 D Min Typ. Max 1810 565 41 = 4.8 5.3 0.5 1.5 Unit ...

Page 5

... STS17NH3LL Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM (1) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. STS17NH3LL Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STS17NH3LL Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STS17NH3LL ...

Page 9

... STS17NH3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STS17NH3LL inch MIN. TYP. 0.003 0.025 0.013 0.007 0.010 45 (typ.) 0.188 0.228 0.050 0.150 0.14 0.015 8 (max.) MAX. 0.068 0.009 0.064 ...

Page 11

... STS17NH3LL 5 Revision history Table 9. Document revision history Date 01-Aug-2006 09-Jan-2007 12-Dec-2007 Revision 1 First release 2 Complete version 3 Inserted new Table 4: Avalanche data Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STS17NH3LL ...

Related keywords