IRFH5304TR2PBF International Rectifier, IRFH5304TR2PBF Datasheet - Page 7

• Manufacturer Part Number: IRFH5304TR2PBF
• Description: MOSFET N-CH 30V 22A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5304TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 2360pF @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5304TR2PBFTR

For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
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Note: For the most current drawing please refer to IR website at:
PQFN 5x6 Outline "B" Package Details
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DATE CODE
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IDENTIFIER
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RECTIFIER LOGO
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XYWWX
XXXXX
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http://www.irf.com/package/
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
LOT CODE
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7