IRF6722STR1PBF International Rectifier, IRF6722STR1PBF Datasheet

MOSFET N-CH 30V 13A DIRECTFET

IRF6722STR1PBF

Manufacturer Part Number
IRF6722STR1PBF
Description
MOSFET N-CH 30V 13A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6722STR1PBF.pdf (9 pages)

Specifications of IRF6722STR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.3 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1320pF @ 15V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric ST
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.3 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
58 A
Power Dissipation
42 W
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6722STR1PBFTR
Description
The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6722SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6722SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚
ƒ
l
l
l
l
l
l
l
l
l
l
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AS
DS
GS
AS
RoHS Compliant Containing No Lead and Bromide 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Control FET application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
A
A
C
20
15
10
5
0
= 25°C
= 70°C
= 25°C
2
Fig 1. Typical On-Resistance vs. Gate Voltage
4
SX
V GS, Gate -to -Source Voltage (V)
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
ST
T J = 25°C
10
12
14
T J = 125°C
Ãg
g
16
Parameter
I D = 13A
GS
GS
GS
MQ
18
@ 10V
@ 10V
@ 10V
h
20
f
MX
„
…
†
30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V
Q
11nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
g tot
C
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
DSS
measured with thermocouple mounted to top (Drain) of part.
14
12
10
8
6
4
2
0
MT
0

J
I D = 11A
4.1nC
= 25°C, L = 1.45mH, R
Q
IRF6722STRPbF
gd
4
V
GS
DirectFET™ Power MOSFET ‚
MP
Q G Total Gate Charge (nC)
ST
1.2nC
8
Q
IRF6722SPbF
gs2
Max.
12
110
±20
30
13
11
58
82
11
R
V DS = 24V
V DS = 15V
DS(on)
G
30nC
Q
= 25Ω, I
16
rr
DirectFET™ ISOMETRIC
TM
20
AS
packaging to achieve
11nC
Q
= 11A.
oss
24
R
DS(on)
Units
V
mJ
11/12/07
1.9V
28
V
A
A
gs(th)
1

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IRF6722STR1PBF Summary of contents

Page 1

RoHS Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6722SPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

IRF6722SPbF 1000 100 10 1 2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

150°C 100 25° -40° 0.3 0.4 0.5 0.6 0.7 0.8 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

IRF6722SPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

IRF6722SPbF DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6722STRPBF). For 1000 parts on 7" reel, order IRF6722STR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

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