IRF6722MTR1PBF International Rectifier, IRF6722MTR1PBF Datasheet

IRF6722MTR1PBF

Manufacturer Part Number

IRF6722MTR1PBF

Description

MOSFET N-CH 30V 13A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6722MTR1PBF.pdf (9 pages)

Specifications of IRF6722MTR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7.7 mOhm @ 13A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

13A

Vgs(th) (max) @ Id

2.4V @ 50µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1300pF @ 15V

Power - Max

2.3W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MP

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10.8 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

56 A

Power Dissipation

42 W

Gate Charge Qg

11 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6722MTR1PBFTR

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

‚

www.irf.com

Absolute Maximum Ratings

RoHS Compliant Containing No Lead and Bromide

Dual Sided Cooling Compatible

Ideal for CPU Core DC-DC Converters

Optimized for Control FET application

Compatible with existing Surface Mount Techniques

Low Profile (<0.7 mm)

Ultra Low Package Inductance

Optimized for High Frequency Switching

Low Conduction and Switching Losses

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

Fig 1. Typical On-Resistance vs. Gate Voltage

= 25°C

= 70°C

= 25°C

V GS, Gate -to -Source Voltage (V)

T J = 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

Parameter

I D = 13A

@ 10V

„

…

†

30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

11nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

DSS

measured with thermocouple mounted to top (Drain) of part.

I D = 11A

4.3nC

= 25°C, L = 1.45mH, R

IRF6722MTRPbF

DirectFET™ Power MOSFET ‚

Q G , Total Gate Charge (nC)

V DS = 24V

V DS = 15V

IRF6722MPbF

1.2nC

gs2

Max.

110

±20

DS(on)

26nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

11nC

= 11A.

oss

DS(on)

Units

11/12/07

1.8V

gs(th)

Related parts for IRF6722MTR1PBF

IRF6722MTR1PBF Summary of contents

Page 1

RoHS Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6722MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

IRF6722MPbF 1000 100 10 1 2.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 10 1 0.1 ...

Page 5

150°C 100 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6722MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

IRF6722MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC MAX CODE MIN MAX A 6.25 6.35 0.246 B 4.80 5.05 1.889 C 0.152 3.85 3.95 0.014 D 0.35 0.45 E 0.62 0.023 0.58 F 0.58 0.62 0.023 G 0.030 0.75 0.79 ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6722MTRPBF). For 1000 parts on 7" reel, order IRF6722MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

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