MOSFET N-CH 30V 13A DIRECTFET

IRF6722MTR1PBF

Manufacturer Part NumberIRF6722MTR1PBF
DescriptionMOSFET N-CH 30V 13A DIRECTFET
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF6722MTR1PBF datasheet
 


Specifications of IRF6722MTR1PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs7.7 mOhm @ 13A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C13AVgs(th) (max) @ Id2.4V @ 50µA
Gate Charge (qg) @ Vgs17nC @ 4.5VInput Capacitance (ciss) @ Vds1300pF @ 15V
Power - Max2.3WMounting TypeSurface Mount
Package / CaseDirectFET™ Isometric MPTransistor PolarityN-Channel
Resistance Drain-source Rds (on)10.8 mOhmsDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage20 VContinuous Drain Current56 A
Power Dissipation42 WGate Charge Qg11 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRF6722MTR1PBFTR
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RoHS Compliant Containing No Lead and Bromide 
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible 
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching 
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET application
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques 
l
100% Rg tested
l
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Description
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Continuous Drain Current, V
I
@ T
= 25°C
D
C
I
Pulsed Drain Current
DM
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AS
20
15
10
T J = 125°C
5
T J = 25°C
0
0
2
4
6
8
10
12
V GS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
IRF6722MTRPbF
V
DSS
30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V
Q
Q
g tot
11nC
4.3nC

MQ
MX
MT
Parameter
@ 10V
GS
@ 10V
GS
f
@ 10V
GS
g
h
Ãg
14.0
I D = 13A
I D = 11A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
14
16
18
20
0
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
T
measured with thermocouple mounted to top (Drain) of part.
C
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
= 25°C, L = 1.45mH, R
J
IRF6722MPbF
DirectFET™ Power MOSFET ‚
V
R
R
GS
DS(on)
DS(on)
Q
Q
Q
V
gd
gs2
rr
oss
1.2nC
26nC
11nC
DirectFET™ ISOMETRIC
MP
MP
TM
packaging to achieve
Max.
Units
30
±20
13
11
56
110
82
11
V DS = 24V
V DS = 15V
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
= 25Ω, I
= 11A.
G
AS
11/12/07
gs(th)
1.8V
V
A
mJ
A
28
1

IRF6722MTR1PBF Summary of contents

  • Page 1

    RoHS Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized ...

  • Page 2

    IRF6722MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

  • Page 3

    Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

  • Page 4

    IRF6722MPbF 1000 100 10 1 2.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 10 1 0.1 ...

  • Page 5

    150°C 100 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

  • Page 6

    IRF6722MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching ...

  • Page 7

    D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

  • Page 8

    IRF6722MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC MAX CODE MIN MAX A 6.25 6.35 0.246 B 4.80 5.05 1.889 C 0.152 3.85 3.95 0.014 D 0.35 0.45 E 0.62 0.023 0.58 F 0.58 0.62 0.023 G 0.030 0.75 0.79 ...

  • Page 9

    ... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6722MTRPBF). For 1000 parts on 7" reel, order IRF6722MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...