IRF6722MTR1PBF International Rectifier, IRF6722MTR1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF6722MTR1PBF
• Description: MOSFET N-CH 30V 13A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6722MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Power Dissipation: 42 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6722MTR1PBFTR

IRF6722MPbF
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
1000
1000
1000
Fig 6. Typical Transfer Characteristics
0.01
100
100
100
0.1
0.1
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1.5
1
V DS = 15V
≤60µs PULSE WIDTH
2.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
2.5
1
C iss
C rss
C oss
3.0
f = 1 MHZ
10
≤ 60µs PULSE WIDTH
Tj = 25°C
3.5
T J = 150°C
T J = 25°C
T J = -40°C
10
TOP
BOTTOM
4.0
4.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5.0
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
10
30
25
20
15
10
1
5
0
0.1
-60 -40 -20 0
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance vs.
I D = 13A
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
2.5V
I D , Drain Current (A)
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
40
1
20 40 60 80 100 120 140 160
V GS = 10V
V GS = 4.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
60
10
80
TOP
BOTTOM
T J = 25°C
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100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
120