IRF6722MTR1PBF International Rectifier, IRF6722MTR1PBF Datasheet - Page 7
IRF6722MTR1PBF
Manufacturer Part Number
IRF6722MTR1PBF
Description
MOSFET N-CH 30V 13A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6722MTR1PBF.pdf
(9 pages)
Specifications of IRF6722MTR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.7 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
56 A
Power Dissipation
42 W
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6722MTR1PBFTR
www.irf.com
+
-
D.U.T
Fig 18.
+
-
•
•
•
•
SD
•
•
•
-
D
D
G
+
+
-
G
Re-Applied
Voltage
Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
for HEXFET
P.W.
SD
DS
Waveform
Waveform
D= DRAIN
G = GATE
S = SOURCE
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
D
D
®
Diode Recovery
Current
Power MOSFETs
dv/dt
Forward Drop
di/dt
IRF6722MPbF
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7