IRFH5302DTR2PBF International Rectifier, IRFH5302DTR2PBF Datasheet - Page 4

MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTR2PBF

Manufacturer Part Number
IRFH5302DTR2PBF
Description
MOSFET N-CH 30V 29A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302DTR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3635pF @ 25V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
3.6 W
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5302DTR2PBFTR
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
160
140
120
100
Fig 9. Maximum Drain Current vs.
80
60
40
20
100
0.001
1.0
10
0
0.01
0.1
25
10
Case (Bottom) Temperature
0.0
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.2
D = 0.50
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.01
0.02
0.20
0.05
0.10
T J = 150°C
0.4
75
SINGLE PULSE
( THERMAL RESPONSE )
0.6
1E-005
Limited By Package
T J = 25°C
100
0.8
1.0
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.4
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
Fig 8. Maximum Safe Operating Area
0.001
1
Fig 10. Threshold Voltage vs. Temperature
-75 -50 -25
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
V DS , Drain-to-Source Voltage (V)
10msec
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
0.01
25
DC
1msec
50
100µsec
10
75 100 125 150
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0.1
100

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