MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTR2PBF

Manufacturer Part NumberIRFH5302DTR2PBF
DescriptionMOSFET N-CH 30V 29A 8VQFN
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFH5302DTR2PBF datasheet
 


Specifications of IRFH5302DTR2PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs2.5 mOhm @ 50A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C29AVgs(th) (max) @ Id2.35V @ 100µA
Gate Charge (qg) @ Vgs55nC @ 10VInput Capacitance (ciss) @ Vds3635pF @ 25V
Power - Max3.6WMounting TypeSurface Mount
Package / Case8-VQFNTransistor PolarityN-Channel
Resistance Drain-source Rds (on)3.7 mOhmsDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage20 VContinuous Drain Current29 A
Power Dissipation3.6 WGate Charge Qg26 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRFH5302DTR2PBFTR
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1000
100
T J = 150°C
T J = 25°C
10
1.0
0.0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
160
140
Limited By Package
120
100
80
60
40
20
0
25
50
75
100
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
1000
100
10
Tc = 25°C
Tj = 150°C
V GS = 0V
Single Pulse
1
1.0
1.2
1.4
0
Fig 8. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125
150
-75 -50 -25
Fig 10. Threshold Voltage vs. Temperature
0.0001
0.001
t 1 , Rectangular Pulse Duration (sec)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
10msec
DC
1
10
V DS , Drain-to-Source Voltage (V)
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
0
25
50
75 100 125 150
T J , Temperature ( °C )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
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