IRFH5302DTR2PBF International Rectifier, IRFH5302DTR2PBF Datasheet - Page 8

MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTR2PBF

Manufacturer Part Number
IRFH5302DTR2PBF
Description
MOSFET N-CH 30V 29A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302DTR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3635pF @ 25V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
3.6 W
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5302DTR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5302DTR2PBF
Manufacturer:
IR
Quantity:
20 000

ƒ
PQFN 5x6 Outline "B" Tape and Reel
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†††
Revision History
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
8
3/31/2010
Starting T
test capability.
θ
is measured at
Date
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
http://www.irf.com/product-info/reliability
J
= 25°C, L = 0.14mH, R
Idss limits at Tj 25°C is changed to 500µA max, Vds = 24V and at Tj 125°C it is changed to 5.0mA
max, Vds = 24V. All other parameters remain unchanged.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
J
G
= 25Ω, I
AS
= 50A.
PQFN 5mm x 6mm
Visit us at www.irf.com for sales contact information.04/2010
(per JE DE C JE S D47F
Comment
Data and specifications subject to change without notice.
Indus trial
Yes
(per JE DE C J-S T D-020D
††
†††
guidelines )
TAC Fax: (310) 252-7903
MS L1
www.irf.com
†††
)

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