IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 3
IRF6710S2TR1PBF
Manufacturer Part Number
IRF6710S2TR1PBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6710S2TR1PBF.pdf
(10 pages)
Specifications of IRF6710S2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6710S2TR1PBFTR
Surface mounted on 1 in. square Cu
board (still air).
P
P
P
T
T
T
R
R
R
R
R
Notes:
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
P
J
STG
θJA
θJA
θJA
θJC
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
A
A
C
= 25°C
= 70°C
= 25°C
0.01
100
0.1
10
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
1E-006
D = 0.50
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
0.05
0.02
0.01
0.10
0.20
1E-005
fl
0.0001
f
jl
kl
SINGLE PULSE
( THERMAL RESPONSE )
l
Parameter
Parameter
Ã
t 1 , Rectangular Pulse Duration (sec)
Mounted on minimum footprint full size board with metalized
0.001
back and with small clip heatsink. (still air)
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
0.01
θ
is measured at
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
0.1
1
R
1
T
τ
J
2
Typ.
τ
R
of approximately 90°C.
12.5
2
–––
–––
1.0
2
20
R
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
-55 to + 175
R
τ
3
3
R
τ
3
1
3
Max.
0.012
270
1.8
1.3
τ
15
C
τ
Ri (°C/W)
48.48669
21.76032
11.759
Max.
–––
–––
–––
9.8
82
10
τι (sec)
0.009459
0.9378
37.2
100
Units
Units
°C/W
W/°C
°C
W
3