IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 3

MOSFET N-CH 25V 12A DIRECTFET

IRF6710S2TR1PBF

Manufacturer Part Number
IRF6710S2TR1PBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6710S2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6710S2TR1PBFTR
ƒ
ˆ
ƒ Surface mounted on 1 in. square Cu
board (still air).
P
P
P
T
T
T
R
R
R
R
R
Notes:
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
P
J
STG
θJA
θJA
θJA
θJC
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
A
A
C
= 25°C
= 70°C
= 25°C
0.01
100
0.1
10
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
1E-006
D = 0.50
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
0.05
0.02
0.01
0.10
0.20
1E-005
fl
0.0001
f
jl
kl
SINGLE PULSE
( THERMAL RESPONSE )
l
Parameter
Parameter
Ã
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
0.001
back and with small clip heatsink. (still air)
Š
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
0.01
θ
is measured at
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
0.1
1
R
1
T
τ
J
2
Typ.
τ
R
of approximately 90°C.
12.5
2
–––
–––
1.0
2
20
R
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
-55 to + 175
R
τ
3
3
R
τ
3
1
3
Max.
0.012
270
1.8
1.3
τ
15
C
τ
Ri (°C/W)
48.48669
21.76032
11.759
Max.

–––
–––
–––
9.8
82
10
τι (sec)
0.009459
0.9378
37.2
100
Units
Units
°C/W
W/°C
°C
W
3

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