IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6710S2TR1PBF
• Description: MOSFET N-CH 25V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6710S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 13V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 15 W
• Gate Charge Qg: 8.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6710S2TR1PBFTR

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Fig 19.
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Optional additional pad to allow
interchangeability with S2
outline devices.
Mandatory pads to fit S1 outline.
HEXFET
D
D
+
-
G
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
G = GATE
D = DRAIN
S = SOURCE
SD
DS
Waveform
Waveform
D
D
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
CL
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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