IRF6720S2TR1PBF International Rectifier, IRF6720S2TR1PBF Datasheet - Page 3

• Manufacturer Part Number: IRF6720S2TR1PBF
• Description: MOSFET N-CH 30V 11A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6720S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1140pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 17 W
• Gate Charge Qg: 7.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6720S2TR1PBFTR

ƒ
„
ˆ
P
P
P
T
T
T
R
R
R
R
R
ƒ Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
Thermal Resistance
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
A
A
C
= 25°C
= 70°C
= 25°C
0.01
100
0.1
10
1E-006
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.01
0.02
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
fl
f
jl
kl
l
Parameter
Parameter
Ã
0.001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
τ
J
τ
J
τ
1
0.01
Ci= τi/Ri
τ
1
Ci= τi/Ri
‰
Š
R
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
1
R
θ
1
is measured at
τ
2
R
τ
2
0.1
2
R
2
R
τ
3
3
R
τ
3
3
τ
T
R
4
τ
1
4
J
R
4
4
Typ.
of approximately 90°C.
12.5
–––
–––
1.0
20
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
R
5
τ
5
R
5
5
-55 to + 175
τ
A
τ
A
Max.
0.012
10
Ri (°C/W)
270
1.7
1.2
17
2.676
9.578
34.880
22.105
16.766

Max.
–––
–––
–––
8.6
86
100
0.00017
0.007941
0.52375
4.978
84
τi (sec)
1000
Units
Units
°C/W
W/°C
°C
W
3