IRF6720S2TR1PBF International Rectifier, IRF6720S2TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF6720S2TR1PBF
• Description: MOSFET N-CH 30V 11A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6720S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1140pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 17 W
• Gate Charge Qg: 7.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6720S2TR1PBFTR

Fig 14. Typ. Forward Transconductance vs. Drain Current
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
www.irf.com
100
35
30
25
20
15
10
10
50
40
30
20
10
5
0
1
0
0
25
0.0
0
0.2
50
V SD , Source-to-Drain Voltage (V)
I D ,Drain-to-Source Current (A)
T C , Case Temperature (°C)
20
0.4
75
0.6
40
V DS = 15V
T J = 175°C
100
380µs PULSE WIDTH
0.8
T J = 25°C
60
1.0
125
T J = 175°C
T J = 25°C
T J = -40°C
V GS = 0V
1.2
150
80
1.4
175
1.6
100
Fig 15. Maximum Avalanche Energy vs. Drain Current
Fig 13. Typical Threshold Voltage vs. Junction
1000
0.01
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
320
280
240
200
160
120
0.1
10
80
40
1
0
-75 -50 -25
Fig 11. Maximum Safe Operating Area
0.01
25
I D = 25µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
T A = 25°C
T J = 150°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
Temperature
75
DC
25 50 75 100 125 150 175
1.00
100
10msec
TOP
BOTTOM 8.8A
100µsec
125
1msec
10.00
150
I D
1.5A
2.4A
100.00
175
5