IRF6720S2TR1PBF International Rectifier, IRF6720S2TR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF6720S2TR1PBF
• Description: MOSFET N-CH 30V 11A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6720S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1140pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 17 W
• Gate Charge Qg: 7.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6720S2TR1PBFTR

6
80
70
60
50
40
30
20
10
0.01
0
100
0.1
10
25
1.0E-06
1
Fig 17. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 25°C
and Tstart = 150°C.
0.01
50
0.05
0.10
Duty Cycle = Single Pulse
TOP
BOTTOM 1.0% Duty Cycle
I D = 8.8A
75
vs. Temperature
1.0E-05
100
Single Pulse
Fig 16. Typical Avalanche Current vs.Pulsewidth
125
150
1.0E-04
175
tav (sec)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 150°C and
Tstart =25°C (Single Pulse)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
1.0E-03
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 19a, 19b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 16, 17).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-02
= P
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
www.irf.com
thJC
1.0E-01
jmax
is