STP27N3LH5 STMicroelectronics, STP27N3LH5 Datasheet - Page 9

• Manufacturer Part Number: STP27N3LH5
• Description: MOSFET N-CH 30V 27A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP27N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.015ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9095-5

STD27N3LH5, STP27N3LH5, STU27N3LH5
3
Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
25 Ω
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D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
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3.3
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Doc ID 15617 Rev 3
1000
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AM01468v1
AM01470v1
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DD
Figure 16. Gate charge test circuit
Figure 18. Unclamped inductive load test
Figure 20. Switching time waveform
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100Ω
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100nF
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Test circuits
3.3
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AM01471v1
AM01473v1
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