STP4NK50Z STMicroelectronics, STP4NK50Z Datasheet

MOSFET N-CH 500V 3A TO-220

STP4NK50Z

Manufacturer Part Number
STP4NK50Z
Description
MOSFET N-CH 500V 3A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP4NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3190-5

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DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
December 2002
STP4NK50Z
STP4NK50ZFP
STD4NK50Z
STD4NK50Z-1
N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
STP4NK50ZFP
STD4NK50ZT4
STD4NK50Z-1
TYPE
SALES TYPE
STP4NK50Z
DS
(on) = 2.3
500 V
500 V
500 V
500 V
V
DSS
Zener-Protected SuperMESH™Power MOSFET
R
< 2.7
< 2.7
< 2.7
< 2.7
DS(on)
P4NK50ZFP
MARKING
P4NK50Z
D4NK50Z
D4NK50Z
3 A
3 A
3 A
3 A
I
D
STP4NK50Z - STP4NK50ZFP
STD4NK50Z - STD4NK50Z-1
45 W
20 W
45 W
45 W
Pw
PACKAGE
TO-220FP
TO-220
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
DPAK
1
3
TAPE & REEL
PACKAGING
TUBE
TUBE
TUBE
TO-220FP
IPAK
1
1
2
2
1/13
3
3

Related parts for STP4NK50Z

STP4NK50Z Summary of contents

Page 1

... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP4NK50Z STP4NK50ZFP STD4NK50ZT4 STD4NK50Z-1 December 2002 STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z INTERNAL SCHEMATIC DIAGRAM ...

Page 2

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA ...

Page 4

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Safe Operating For TO-220 Safe Operating Area For TO-220FP Safe Operating Area For DPAK/IPAK 4/13 Thermal Impedance For TO-220 Thermal Impedance For TO-220FP Thermal Impedance For DPAK/IPAK ...

Page 5

... Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/13 ...

Page 6

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/13 ...

Page 8

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/13 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14 ...

Page 9

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.5 0.045 1.5 0.045 5.2 0.195 2 ...

Page 10

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 10/13 TO-252 (DPAK) MECHANICAL DATA mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1. inch MIN. TYP. MAX. 0.087 ...

Page 11

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 0.8 L2 MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.95 0.6 0.017 0.6 0.019 6 ...

Page 12

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7 ...

Page 13

... STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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