IRF6604 International Rectifier, IRF6604 Datasheet

MOSFET N-CH 30V 12A DIRECTFET

IRF6604

Manufacturer Part Number
IRF6604
Description
MOSFET N-CH 30V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6604

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 12A, 7V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.1V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2270pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MQ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6604TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
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IRF6604
Manufacturer:
IR
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IRF6604
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IR
Quantity:
8 000
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IRF6604
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Part Number:
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Part Number:
IRF6604TR1
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1 000
Part Number:
IRF6604TR1
Manufacturer:
IR
Quantity:
20 000
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
www.irf.com
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Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed
regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize
thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Notes  through ˆ are on page 11
V
V
I
I
I
I
P
P
P
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
J
STG
DS
GS
D
D
D
Techniques
θJA
θJA
θJA
θJC
θJ-PCB
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount
@ T
@ T
@ T
SQ
@T
@T
@T
C
A
A
A
A
C
= 25°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
SX
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
ST
Parameter
Parameter
ij
g
g
fj
gj
hj
MQ
GS
GS
GS
@ 7.0V
@ 7.0V
@ 7.0V
MX
V
30V
DSS
MT
MQ
Typ.
12.5
–––
–––
1.0
11.5mΩ@V
20
13mΩ@V
R
HEXFET Power MOSFET
-40 to + 150
DS(on)
Max.
0.018
±12
9.2
2.3
1.5
30
49
12
92
42
GS
GS
Max.
max
IRF6604
–––
–––
–––
3.0
55
DirectFET™ ISOMETRIC
= 4.5V
= 7.0V
TM
packaging
Units
Units
17nC
W/°C
°C/W
Qg
°C
W
11/16/05
V
A
1

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IRF6604 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc- tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 7.0V 4.5V 4.0V 3.5V 3.3V 3.0V 100 BOTTOM 2.7V 2.7V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 25°C ...

Page 4

0V MHZ C iss = rss = oss = Ciss 1000 Coss Crss 100 1 10 ...

Page 5

Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

DirectFET™ Outline Dimension, MQ Outline (Medium Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com DIMENSIONS METRIC IMPERIAL MAX CODE MIN MIN ...

Page 10

DirectFET™ Substrate and PCB Layout, MQ Outline (MediumSize Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs GATE D ...

Page 11

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6604). For 1000 parts on 7" reel, order IRF6604TR1 CODE www.irf.com REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL ...

Page 12

DirectFET™ Part Marking Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.70mH 25Ω 9.6A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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