STP36NF06 STMicroelectronics, STP36NF06 Datasheet - Page 7

MOSFET N-CH 60V 30A TO-220

STP36NF06

Manufacturer Part Number
STP36NF06
Description
MOSFET N-CH 60V 30A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP36NF06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
9 ns
Rise Time
40 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3186-5

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STP36NF06 - STP36NF06FP
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs. gate-source voltage Figure 10. Capacitance variations
vs. temperature
Figure 8.
Figure 12. Normalized on resistance vs.
Static drain-source on resistance
temperature
Electrical characteristics
7/14

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